PVD Systems
Physical vapor deposition (PVD) refers to a variety of vacuum deposition methods. Physical processes such as sputtering and evaporation (organic or inorganic) are used in PVD to generate a vapor, in the form of atoms, molecules, or ions. This vapor is carried across a region of low pressure from source to substrate. Upon contact with the substrate the vapor condenses to form a thin film layer. Films can be grown in this way as coatings, multilayer stacks, composites etc. to grow fully structured devices.
System Comparison Table
| PVD4 | PVD4+ | PVD6 | PVD8 | PVD20 | |
|---|---|---|---|---|---|
| Process Technology | Magnetron Sputtering (SU) Thermal Evaporation – up to 4 joule effect sources Hybrid Organic Evaporation – up to 2 joule effect sources – up to 2 x organic sources | Magnetron Sputtering (SU) up to 4 x 2’’ or 3 x 3” cathodes Hybrid Sputtering & Thermal Evaporation – up to 4 joule effect sources – up to 2 x 2’’ cathodes Hybrid E-beam & Thermal Evaporation – up to 4 joule effect sources – 1 x multi-pocket E-Beam | Magnetron Sputtering – Sputter Up or Sputter down configurations – Standard: Up to 6 x 2’’ cathodes in confocal array – Special: mix of 2’’ & 3”, or 4” in confocal, planar or off-axis | Magnetron Sputtering – Sputter Up or Sputter down configurations – Standard: Up to 8 x 2’’ cathodes in confocal array (standard) – Special: mix of 2’’ & 3”, or 4” in confocal, planar or off-axis | Magnetron Sputtering (SU) – up to 4 x 3’’ or 3 x 4” cathodes Hybrid Sputtering & Thermal Evaporation – up to 4 x joule effect sources – up to 4 x 3’’ cathodes Hybrid E-beam & Thermal Evaporation – up to 4 x joule effect sources – 1 x multi-pocket 15/20/25 cc E-Beam – 1 x grid-less ion beam source |
| Vacuum level | Standard 5 E-7 mbar Enhanced Performance 5E-8 mbar | Standard 5 E-8 mbar Enhanced Performance 8E-10 mbar | Standard 5 E-7 mbar Enhanced Performance 5E-8 mbar | Enhanced Performance 8E-10 mbar Standard 5 E-8 mbar | Standard 5 E-7 mbar Enhanced Performance 5E-8 mbar |
| Chamber type | Cylindrical SS304L | Cylindrical SS304L | Cylindrical SS304L | Cylindrical SS304L | D-Chamber SS304L |
| Load Lock compatibility | No | Yes – one sample at a time | Yes Standard: one sample at a time Enhanced Performance : up to 6 samples with motorized lift. Manual or Motorized transfer from LL to process chamber | Yes Standard: one sample at a time Enhanced Performance : up to 6 samples with motorized lift Manual or Motorized transfer from LL to process chamber | Yes Standard: one sample at a time Enhanced Performance : up to 6 samples with motorized lift Manual or Motorized transfer from LL to process chamber |
| Substrate size | Up to 6 circular Or 4’’ x 4’’ square Compatible small pieces & shapes Compatible with masks | Up to 6 circular Or 4’’ x 4’’ square Compatible small pieces & shapes Compatible with masks | Up to 6 circular Or 4’’ x 4’’ square Compatible small pieces & shapes Compatible with masks | Up to 6 circular Or 4’’ x 4’’ square Compatible small pieces & shapes Compatible with masks | Up to 6 circular Or 4’’ x 4’’ square Compatible small pieces & shapes Compatible with masks |
| Sample Treatment | Heating Standard 350 °C on sample with stabilized T-regulation design Enhanced Performance 850 °C on sample Direct Cooling on sample according to Process chilled water capacity (e.g. -20°C with special chillers) | Heating Standard 350 °C on sample with stabilized T-regulation design Enhanced Performance 850 °C on sample Direct Cooling on sample according to Process chilled water capacity (e.g. -20°C with special chillers) | Heating Standard 350 °C on sample with stabilized T-regulation design Enhanced Performance 850 °C on sample Direct Cooling on sample according to Process chilled water capacity (e.g. -20°C with special chillers) | Heating Standard 350 °C on sample with stabilized T-regulation design Enhanced Performance 850 °C on sample Direct Cooling on sample according to Process chilled water capacity (e.g. -20°C with special chillers) | Heating Standard 350 °C on sample with stabilized T-regulation design Enhanced Performance 850 °C on sample Direct Cooling on sample according to Process chilled water capacity (e.g. -20°C with special chillers) |
| Sample Rotation | Up to 30 RPM according to compatibility with other options | Up to 30 RPM according to compatibility with other options | Up to 30 RPM according to compatibility with other options | Up to 30 RPM according to compatibility with other options | Up to 30 RPM according to compatibility with other options |
| Sample to source variation | Fixed or Variable according to compatibility with other options | Fixed or Variable according to compatibility with other options | Fixed or Variable according to compatibility with other options | Fixed or Variable according to compatibility with other options | Fixed or Variable according to compatibility with other options |
| Process Feedback | Quartz crystal sensor for growth rate Standard: Sequential layer by layer growth feedback Enhanced Performance: Co-deposition for compound or stack growth | Quartz crystal sensor for growth rate Standard: Sequential layer by layer growth feedback Enhanced Performance: Co-deposition for compound or stack growth | Quartz crystal sensor for growth rate Standard: Sequential layer by layer growth feedback Enhanced Performance: Co-deposition for compound or stack growth | Quartz crystal sensor for growth rate Standard: Sequential layer by layer growth feedback Enhanced Performance-1: Co-deposition for compound or stack growth Enhanced Performance-2: High Pressure RHEED for insitu study of morphology and roughness | Quartz crystal sensor for growth rate Standard: Sequential layer by layer growth feedback Enhanced Performance: Co-deposition for compound or stack growth |
Get In Touch Today
Get in touch today to discuss your requirements, please contact us on
+44 (0) 1424 447726 sales@ultrahighvacuum.com
Express delivery for the UK & Europe
Excellent customer care guaranteed
ISO 9001 approved company
Highest quality & performance assured