Small Scale Production Plasma-Enhanced Chemical Vapor Deposition System
This system is used to deposit layers under high vacuum conditions on samples that are RF biased. It is a low temperature technique when compared to typical CVD process, which is a major advantage.
Core System Features:
• Base Pressure 1.10-6 mbar
• Samples up to 300 mm
• Inferior plate of 500 mm diameter with RF bias
• Various Process gases (TMS, Hexane, CF4, O 2, Ar)
• Pumping group (Suitable for corrosive gases)
• Automated Control
Applications:
• Barrier Films
• Insulators
• Optical coatings
• Biomedical
Materials:
• DLC
• Doped/Undoped Amorphous Si
• Dielectrics (Nitrides, Oxynitrides..)
Powerful Software
- Fully & Semi Automatic modes
- User mode Access Levels
Recipe modes for
- Thickness Rate & Deposition Time
- Pre-programmed recipe library
Process Acquisition software with:
- Rate deposition
- Thickness control
- Pressure Display
- Temperature Control
- Valve/Shutter management
Hardware
Integrated PC with Microsoft Windows
