MBE 2D Epitaxy System for Ultrahigh Vacuum
Introducing the MBE (2D) system—a sophisticated, state-of-the-art system engineered for the growth and surface analysis of novel materials and devices, including transition metal di-chalcogenide or topological insulator applications. Designed to operate under a pristine, controlled environment, this system empowers researchers to advance material science and device development. The MBE (2D) system is renowned for its exceptional base pressure capabilities, stable process pressure during heating & growth and versatile configuration options, making it an indispensable tool for advanced research in selective epitaxial growth and semiconductor equipment.
Applications
*III-V Ferromagnets
*2D Topological insulators
*TMDs
Core System Features:
*Base Pressure 5 E 10-11 mbar
*LN2 cryo shrouds
*2” molybloc sample puck or 3’’ bare wafer
*Up to 6 Knudsen cells (35 cc)
*Up to 3 cracker cells
*6 x 7 cc (or 4 x 15) linear E-beam
*Pumping groups: TSP Ion Pump, Cryo or Turbomolecular Pumping
*Heating &/or cooling sample stages
*Growth feedback via flux gauge, quartz monitors
*Integrated RHEED or RHEED AUGERS
*Couples with Transfer tunnel, Load locks & Preparation chambers