MBE 2D Epitaxy System for Ultrahigh Vacuum

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Introducing the MBE (2D) system—a sophisticated, state-of-the-art system engineered for the growth and surface analysis of novel materials and devices, including transition metal di-chalcogenide or topological insulator applications. Designed to operate under a pristine, controlled environment, this system empowers researchers to advance material science and device development. The MBE (2D) system is renowned for its exceptional base pressure capabilities, stable process pressure during heating & growth and versatile configuration options, making it an indispensable tool for advanced research in selective epitaxial growth and semiconductor equipment.

Applications
*III-V Ferromagnets
*2D Topological insulators
*TMDs

Core System Features:
*Base Pressure 5 E 10-11 mbar
*LN2 cryo shrouds
*2” molybloc sample puck or 3’’ bare wafer
*Up to 6 Knudsen cells (35 cc)
*Up to 3 cracker cells
*6 x 7 cc (or 4 x 15) linear E-beam
*Pumping groups: TSP Ion Pump, Cryo or Turbomolecular Pumping
*Heating &/or cooling sample stages
*Growth feedback via flux gauge, quartz monitors
*Integrated RHEED or RHEED AUGERS
*Couples with Transfer tunnel, Load locks & Preparation chambers

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SKU: MBE-2D

Terms and Conditions
Shipping: Standard off-the-shelf stock items will be delivered within 3-5 working days. Non-stock and bespoke products will be advised on an individual basis.


If you require any additional information regarding this product please contact us via the form below or call us on +44 (0) 1424 447726