MBE 2D Epitaxy System for Ultrahigh Vacuum
Introducing the MBE (2D) system—a sophisticated, state-of-the-art system engineered for the growth and surface analysis of novel materials and devices, including transition metal di-chalcogenide or topological insulator applications. Designed to operate under a pristine, controlled environment, this system empowers researchers to advance material science and device development. The MBE (2D) system is renowned for its exceptional base pressure capabilities, stable process pressure during heating & growth and versatile configuration options, making it an indispensable tool for advanced research in selective epitaxial growth and semiconductor equipment.
Applications
• III-V Ferromagnets
• 2D Topological insulators
• TMDs
Core System Features:
• Base Pressure 5 E 10-11 mbar
• LN2 cryo shrouds
• 2” molybloc sample puck or 3’’ bare wafer
• Up to 6 Knudsen cells (35 cc)
• Up to 3 cracker cells
• 6 x 7 cc (or 4 x 15) linear E-beam
• Pumping groups: TSP Ion Pump, Cryo or Turbomolecular Pumping
• Heating &/or cooling sample stages
• Growth feedback via flux gauge, quartz monitors
• Integrated RHEED or RHEED AUGERS
• Couples with Transfer tunnel, Load locks & Preparation chambers